NTLLD4901NFTWG

new-10%

Manufacturer part number:NTLLD4901NFTWG

Manufacturer:ON Semiconductor

Description:ON SEMICONDUCTOR NTLLD4901NFTWG Dual MOSFET, Dual N Channel, 9.6 A, 30 V, 0.014 ohm, 4.5 V, 1.2 V

Case Package:SOT-23

Datasheet:NTLLD4901NFTWG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Surface Mount	YES
Number of Pins	8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	17.4MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	810mW
Pin Count	8
Element Configuration	Dual
Power Dissipation	3.23W
Power - Max	800mW 810mW
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	17.4m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	605pF @ 15V
Current - Continuous Drain (Id) @ 25°C	5.5A 6.3A
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Continuous Drain Current (ID)	6.3A
Threshold Voltage	1.2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9.6A
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free