FDMS3660S          Description

 The device includes two dedicated N-channel MOSFET in a dual PQFN package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous synchronous FET (Q2) are designed to provide optimal power efficiency.

FDMS3660S             Features

Q1: N?Channel

? Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A

? Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A

Q2: N?Channel

? Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A

? Max rDS(on) = 2.2 m at VGS = 4.5 V, ID = 27 A

? Low Inductance Packaging Shortens Rise/Fall Times, Resulting in

Lower Switching Losses

? MOSFET Integration Enables Optimum Layout for Lower Circuit

Inductance and Reduced Switch Node Ringing

? These Devices are Pb?Free and are RoHS Compliant

FDMS3660S          Applications

? Computing

? Communications

? General Purpose Point of Load

? Notebook VCORE