DMC3025LSD-13

new-10%

Manufacturer part number:DMC3025LSD-13

Manufacturer:Diodes Incorporated

Description:MOSFET N/P-CH 30V 6.5A/4.2A 8SO

Case Package:SOT-23

Datasheet:DMC3025LSD-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2012
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	Other Transistors
Max Power Dissipation	1.2W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	DMC3025
Reference Standard	AEC-Q101
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	6.8 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 7.4A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	501pF @ 15V
Current - Continuous Drain (Id) @ 25°C	6.5A 4.2A
Gate Charge (Qg) (Max) @ Vgs	9.8nC @ 10V
Rise Time	4.9ns
Drain to Source Voltage (Vdss)	30V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	12.4 ns
Turn-Off Delay Time	28.4 ns
Continuous Drain Current (ID)	4.2A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	5.3A
Drain to Source Breakdown Voltage	-30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.5mm
Length	4.95mm
Width	3.95mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free