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EPC2100

EPC2100

EPC2100

EPC

GAN TRANS ASYMMETRICAL HALF BRID

SOT-23

EPC2100 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series eGaN®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.5V @ 4mA, 2.5V @ 16mA
Input Capacitance (Ciss) (Max) @ Vds 475pF @ 15V 1960pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10A Ta 40A Ta
Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 15V, 19nC @ 15V
Drain to Source Voltage (Vdss) 30V
FET Feature GaNFET (Gallium Nitride)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
500 $4.71200 $2356
1,000 $4.25600 $4.256

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