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FDMS7600AS

  • FDMS7600AS
  • FDMS7600AS

FDMS7600AS

FDMS7600AS

ON Semiconductor

FDMS7600AS datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDMS7600AS Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 211mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory FET General Purpose Power
Max Power Dissipation 1W
Terminal Form FLAT
JESD-30 Code R-PDSO-F6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Case Connection SOURCE
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A 22A
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 7.6ns
Fall Time (Typ) 5.2 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 40A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0075Ohm
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1 V
Height 700μm
Length 5mm
Width 6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.227310 $1.22731
10 $1.157840 $11.5784
100 $1.092302 $109.2302
500 $1.030473 $515.2365
1000 $0.972145 $972.145
FDMS7600AS Product Details

FDMS7600AS        Description


   The device includes two specialized N-channel MOSFET in a dual MLP package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.


FDMS7600AS     Features

 

Q1: N-Channel

Max. RDS(on) = 7.5 m|? at VGS = 10 V, ID = 12 A

Max. RDS(on) = 12 m|? at VGS = 4.5 V, ID = 10 A

Q2: N-Channel

Max. RDS(on) = 2.8 m|? at VGS = 10 V, ID = 20 A

Max. RDS(on) = 3.3 m|? at VGS = 4.5 V, ID = 18 A

RoHS Compliant


FDMS7600AS            Applications


This product is general usage and suitable for many different applications.

 


 





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