FDMS8672S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDMS8672S Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Supplier Device Package
8-PQFN (5x6)
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
35A
Number of Elements
1
Power Dissipation-Max
2.5W Ta 50W Tc
Power Dissipation
2.5W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
2515pF @ 15V
Current - Continuous Drain (Id) @ 25°C
17A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs
47nC @ 10V
Rise Time
17ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
7 ns
Turn-Off Delay Time
27 ns
Continuous Drain Current (ID)
35A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Input Capacitance
2.515nF
Drain to Source Resistance
5mOhm
Rds On Max
5 mΩ
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.73000
$0.73
500
$0.7227
$361.35
1000
$0.7154
$715.4
1500
$0.7081
$1062.15
2000
$0.7008
$1401.6
2500
$0.6935
$1733.75
FDMS8672S Product Details
FDMS8672S Description
FDMS8672S is a 30V N-Channel PowerTrench? SyncFET? manufactured by onsemi. The FDMS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low rDS(on) and low gate charge. The FDMS8672S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using a monolithic SyncFET technology.
FDMS8672S Features
Max rDs(on)= 5.0mΩ at VGs= 10V, lD= 17A
Max rDs(on)= 7.0mΩ at VGs = 4.5V,ID = 15A
Advanced Package and silicon combination for low rDs(on) and high efficiency