FDMT80080DC Description

Utilizing the cutting-edge PowerTrench? method, this N-Channel MOSFET was created. The lowest rDS(on) while maintaining outstanding switching performance has been achieved by combining advancements in both silicon and Dual CoolTM package technologies. This is made possible by the incredibly low Junction-to-Ambient thermal resistance.

FDMT80080DC Features

• Max rDS(on) = 1.35 m|? at VGS = 10 V, ID = 36 A

• Max rDS(on) = 1.82 m|? at VGS = 8 V, ID = 31 A

• Advanced Package and Silicon combination for low rDS(on) and high efficiency

• Next generation enhanced body diode technology, engineered for soft recovery

• Low profile 8x8mm MLP package

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

FDMT80080DC Applications

• Oring FET / Load Switch

• Synchronous Rectification

• DC-DC Conversion