APT34N80LC3G

new-10%

Manufacturer part number:APT34N80LC3G

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 800V 34A TO-264

Case Package:SOT-23

Datasheet:APT34N80LC3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Weight	10.6g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	34A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	417W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	417W
Case Connection	DRAIN
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	145m Ω @ 22A, 10V
Vgs(th) (Max) @ Id	3.9V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds	4510pF @ 25V
Current - Continuous Drain (Id) @ 25°C	34A Tc
Gate Charge (Qg) (Max) @ Vgs	355nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	34A
Gate to Source Voltage (Vgs)	20V
Avalanche Energy Rating (Eas)	670 mJ
Height	5.21mm
Length	26.49mm
Width	20.5mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free