FDN5618P_G

new-10%

Manufacturer part number:FDN5618P_G

Manufacturer:ON Semiconductor

Description:INTEGRATED CIRCUIT

Case Package:SOT-23

Datasheet:FDN5618P_G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	500mW Ta
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	170m Ω @ 1.25A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	430pF @ 30V
Current - Continuous Drain (Id) @ 25°C	1.25A Ta
Gate Charge (Qg) (Max) @ Vgs	13.8nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V