TK35N65W5,S1F

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Manufacturer part number:TK35N65W5,S1F

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 650V 35A TO-247

Case Package:SOT-23

Datasheet:TK35N65W5,S1F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Operating Temperature	150°C TJ
Packaging	Tube
Published	2014
Series	DTMOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	270W Tc
Element Configuration	Single
Turn On Delay Time	110 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	95m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 2.1mA
Input Capacitance (Ciss) (Max) @ Vds	4100pF @ 300V
Current - Continuous Drain (Id) @ 25°C	35A Ta
Gate Charge (Qg) (Max) @ Vgs	115nC @ 10V
Rise Time	55ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	150 ns
Continuous Drain Current (ID)	35A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	650V
Radiation Hardening	No
RoHS Status	RoHS Compliant