FDP8874

new-10%

Manufacturer part number:FDP8874

Manufacturer:ON Semiconductor

Description:N-Channel Tube 5.3m Ω @ 40A, 10V ±20V 3130pF @ 15V 72nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:FDP8874 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Factory Lead Time	10 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	PowerTrench®
Published	2004
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated DC	30V
Current Rating	121A
Number of Elements	1
Power Dissipation-Max	110W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	110W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.3m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3130pF @ 15V
Current - Continuous Drain (Id) @ 25°C	16A Ta 114A Tc
Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Rise Time	128ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	44 ns
Continuous Drain Current (ID)	114A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	80A
Drain-source On Resistance-Max	0.0066Ohm
Drain to Source Breakdown Voltage	30V
Height	9.4mm
Length	10.67mm
Width	4.83mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free