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TSM2305CX RFG

  • TSM2305CX RFG
  • TSM2305CX RFG

TSM2305CX RFG

TSM2305CX RFG

Taiwan Semiconductor Corporation

MOSFET (Metal Oxide) P-Channel Digi-Reel® 55m Ω @ 3.2A, 4.5V ±8V 990pF @ 10V 10nC @ 10V 20V TO-236-3, SC-59, SOT-23-3

SOT-23

TSM2305CX RFG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.25W Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 3.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 990pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.2A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Drain Current-Max (Abs) (ID) 3.2A
Drain-source On Resistance-Max 0.052Ohm
Pulsed Drain Current-Max (IDM) 10A
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
TSM2305CX RFG Product Details

TSM2305CX RFG Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 990pF @ 10V.3.2A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 10A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 20V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.

TSM2305CX RFG Features


based on its rated peak drain current 10A.
a 20V drain to source voltage (Vdss)


TSM2305CX RFG Applications


There are a lot of Taiwan Semiconductor Corporation
TSM2305CX RFG applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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