FDP045N10A

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Manufacturer part number:FDP045N10A

Manufacturer:ON Semiconductor

Description:FDP045N10A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDP045N10A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	PowerTrench®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Configuration	Single
Power Dissipation-Max	263W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5270pF @ 50V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	74nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	120A
RoHS Status	RoHS Compliant

FDP045N10A Description

The FDP045N10A N-Channel MOSFET is manufactured with an innovative PowerTrench? process that has been optimized to reduce on-state resistance while preserving exceptional switching performance.