FDP13AN06A0 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDP13AN06A0 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2003
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
62A
Number of Elements
1
Power Dissipation-Max
115W Tc
Element Configuration
Single
Power Dissipation
115W
Turn On Delay Time
9 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
13.5mOhm @ 62A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10.9A Ta 62A Tc
Gate Charge (Qg) (Max) @ Vgs
29nC @ 10V
Rise Time
96ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
26 ns
Turn-Off Delay Time
44 ns
Continuous Drain Current (ID)
62A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Input Capacitance
1.35nF
Drain to Source Resistance
13.5mOhm
Rds On Max
13.5 mΩ
Nominal Vgs
4 V
Height
9.65mm
Length
10.67mm
Width
4.83mm
REACH SVHC
Unknown
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.90000
$0.9
500
$0.891
$445.5
1000
$0.882
$882
1500
$0.873
$1309.5
2000
$0.864
$1728
2500
$0.855
$2137.5
FDP13AN06A0 Product Details
FDP13AN06A0 Description
FDP13AN06A0 is a 60v N-Channel PowerTrench? MOSFET. The onsemi FDP13AN06A0 can be applied in motor load control, DC-DC converters and off-line UPS, and distributed power architectures and VRMs applications due to the following features. The operating junction and storage temperature are between -55 and 175??. The MOSFET FDP13AN06A0 is in the TO-220-3 package with 115W.
FDP13AN06A0 Features
rDS(on) = 11.5 m? ( Typ.) @ VGS = 10 V, ID = 62 A
Qg(tot) = 22 nC ( Typ.) @ VGS = 10 V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)