IPP80R1K2P7XKSA1

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Manufacturer part number:IPP80R1K2P7XKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 800V 4.5A TO220-3

Case Package:SOT-23

Datasheet:IPP80R1K2P7XKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2014
Series	CoolMOS™ P7
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	37W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.2 Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id	3.5V @ 80μA
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 500V
Current - Continuous Drain (Id) @ 25°C	4.5A Tc
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-220AB
Pulsed Drain Current-Max (IDM)	11A
DS Breakdown Voltage-Min	800V
Avalanche Energy Rating (Eas)	10 mJ
RoHS Status	ROHS3 Compliant