NTLJS3113PTAG

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Manufacturer part number:NTLJS3113PTAG

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 20V 3.5A 6-WDFN

Case Package:SOT-23

Datasheet:NTLJS3113PTAG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	40MOhm
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Pin Count	6
Number of Elements	1
Power Dissipation-Max	700mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.9W
Case Connection	DRAIN
Turn On Delay Time	6.9 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1329pF @ 16V
Current - Continuous Drain (Id) @ 25°C	3.5A Ta
Gate Charge (Qg) (Max) @ Vgs	15.7nC @ 4.5V
Rise Time	17.5ns
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	17.5 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	-5.8A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	3.5A
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	23A
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free