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TPH5200FNH,L1Q

TPH5200FNH,L1Q

TPH5200FNH,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 26A SOP8

SOT-23

TPH5200FNH,L1Q Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package 8-SOP Advance (5x5)
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2015
Series U-MOSVIII-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 78W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 52mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 100V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 26A
Input Capacitance 2.2nF
Rds On Max 52 mΩ
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $1.20120 $6.006

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