FDP2710-F085

new-10%

Manufacturer part number:FDP2710-F085

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 250V 4A TO-220

Case Package:SOT-23

Datasheet:FDP2710-F085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	2 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	Automotive, AEC-Q101, PowerTrench®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Power Dissipation-Max	403W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	403W
Case Connection	DRAIN
Turn On Delay Time	80 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	47m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5690pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4A Ta
Gate Charge (Qg) (Max) @ Vgs	101nC @ 10V
Rise Time	252ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	154 ns
Turn-Off Delay Time	112 ns
Continuous Drain Current (ID)	50A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	0.047Ohm
Drain to Source Breakdown Voltage	250V
Avalanche Energy Rating (Eas)	483 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant