STD70N02L-1

new-10%

Manufacturer part number:STD70N02L-1

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 25V 60A IPAK

Case Package:SOT-23

Datasheet:STD70N02L-1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	STripFET™ III
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STD70N
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	60W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	60W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 16V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Rise Time	130ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	60A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.008Ohm
Drain to Source Breakdown Voltage	24V
Pulsed Drain Current-Max (IDM)	240A
Avalanche Energy Rating (Eas)	280 mJ
RoHS Status	ROHS3 Compliant