NTA4001NT1G

new-10%

Manufacturer part number:NTA4001NT1G

Manufacturer:ON Semiconductor

Description:NTA4001NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTA4001NT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	1.5Ohm
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	238mA
Pin Count	3
Number of Elements	1
Power Dissipation-Max	300mW Tj
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3 Ω @ 10mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	20pF @ 5V
Current - Continuous Drain (Id) @ 25°C	238mA Tj
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±10V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	98 ns
Continuous Drain Current (ID)	238mA
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	10V
Drain to Source Breakdown Voltage	20V
Nominal Vgs	1 V
Feedback Cap-Max (Crss)	6 pF
Height	800μm
Length	1.6256mm
Width	900μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free