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NDS9430

NDS9430

NDS9430

ON Semiconductor

NDS9430 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NDS9430 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 2.5W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 60m Ω @ 5.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 528pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.3A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.147225 $0.147225
10 $0.138891 $1.38891
100 $0.131029 $13.1029
500 $0.123613 $61.8065
1000 $0.116616 $116.616
NDS9430 Product Details

NDS9430 Description


This P-Channel MOSFET is made using Fairchild Semiconductor's cutting-edge PowerTrench technology, which has a tough gate version. It has been tailored for power management applications that call for gate drive voltage ratings ranging from 4.5V to 20V.



NDS9430 Features


  • –5.3 A, –30 V RDS(ON) = 60 m? @ VGS = –10 V RDS(ON) =100 m? @ VGS = –4.5 V

  • Low gate charge

  • Fast switching speed

  • High performance trench technology for extremely low RDS(ON)

  • High power and current handling capability



NDS9430 Applications


  • Power management

  • Load switch

  • Battery protection 


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