SIA517DJ-T1-GE3

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Manufacturer part number:SIA517DJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N/P-CH 12V 4.5A SC-70-6

Case Package:SOT-23

Datasheet:SIA517DJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Number of Pins	6
Weight	28.009329mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	6.5W
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SIA517
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.9W
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	29m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs	15nC @ 8V
Rise Time	25ns
Drain to Source Voltage (Vdss)	12V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	25 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	4.5A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	12V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Nominal Vgs	400 mV
Height	800μm
Length	2.05mm
Width	2.05mm
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free