FDS6892A          Description

  These N-channel logic level MOSFET are manufactured using an advanced PowerTrress process that is customized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.

FDS6892A       Features

7.5 A, 20 V

RDS(ON) = 18 mΩ @ VGS = 4.5 V

RDS(ON) = 24 mΩ @ VGS = 2.5 V

Low gate charge

High performance trench technology for extremely low RDS(ON)

High power and current handling capability

FDS6892A              Applications

This product is general usage and suitable for many different applications.