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FDS89141

FDS89141

FDS89141

ON Semiconductor

FDS89141 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDS89141 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 62MOhm
Terminal Finish Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Max Power Dissipation 31W
Terminal Form GULL WING
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 31W
Turn On Delay Time 5 ns
Power - Max 1.6W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 62m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 398pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 7.1nC @ 10V
Rise Time 1.4ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 2.2 ns
Turn-Off Delay Time 9.8 ns
Continuous Drain Current (ID) 3.5A
Threshold Voltage 3.1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 37 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.5mm
Length 4mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.74980 $1.4996
5,000 $0.71438 $3.5719
12,500 $0.68908 $8.26896
FDS89141 Product Details

FDS89141   Description


 The N-channel MOSFET is produced using an advanced Power Tritch process optimized for RDS (conduction), switching performance and ruggedness.

 

FDS89141     Features

 

Shielded Gate MOSFET Technology

Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A

Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A

High Performance Trench Technology for Extremely Low rDS(on)

High Power and Current Handling Capability in a Widely Used Surface Mount Package

100% UIL Tested

RoHS Compliant

 

 FDS89141     Applications


This product is general usage and suitable for many different applications.

Synchronous Rectifier

Primary Switch for Bridge Topology

 





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