FDU6680

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Manufacturer part number:FDU6680

Manufacturer:ON Semiconductor

Description:FDU6680 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDU6680 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	I-PAK
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	3.3W Ta 56W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	10mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1230pF @ 15V
Current - Continuous Drain (Id) @ 25°C	12A Ta 46A Tc
Gate Charge (Qg) (Max) @ Vgs	18nC @ 5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V

Quantity	Unit Price	Ext. Price
1	$4.638757	$4.638757
10	$4.376185	$43.76185
100	$4.128477	$412.8477
500	$3.894790	$1947.395
1000	$3.674330	$3674.33

FDU6680 Description

FDU6680 is a 30V N-Channel PowerTrench? MOSFET. The N-Channel MOSFET FDU6680 is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been specially tailored to minimize the on-state resistance and yet maintain a low gate charge for superior switching performance. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDU6680 is in the TO-220-3 package with 3.3W power dissipation.