FDU8896 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDU8896 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
80W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
5.7m Ω @ 35A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2525pF @ 15V
Current - Continuous Drain (Id) @ 25°C
17A Ta 94A Tc
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.67000
$0.67
500
$0.6633
$331.65
1000
$0.6566
$656.6
1500
$0.6499
$974.85
2000
$0.6432
$1286.4
2500
$0.6365
$1591.25
FDU8896 Product Details
FDU8896 Description
FDU8896 is a 30v N-Channel PowerTrench? MOSFET. This N-Channel MOSFET FDU8896 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The onsemi FDU8896 has been optimized for low gate charge, low rDS(ON), and fast switching speed.
FDU8896 Features
RDS(ON) = 5.7 mΩ, VGS = 10V, ID = 35V
RDS(ON) = 6.8 mΩ, VGS = 4.5V, ID = 35V
High-performance trench technology for extremely low RDS(ON)
Low gate charge
High power and current handling capability
FDU8896 Applications
Cellular phones
Laptop computers
Photovoltaic systems
Wind turbines
Shunt voltage regulator and the series voltage regulator