FDV303N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDV303N Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 16 hours ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
450mOhm
Terminal Finish
TIN
Subcategory
FET General Purpose Power
Voltage - Rated DC
25V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
680mA
[email protected] Reflow Temperature-Max (s)
30
Number of Elements
1
Number of Channels
1
Voltage
20V
Power Dissipation-Max
350mW Ta
Element Configuration
Single
Current
12A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
350mW
Turn On Delay Time
3 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
450m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V
Current - Continuous Drain (Id) @ 25°C
680mA Ta
Gate Charge (Qg) (Max) @ Vgs
2.3nC @ 4.5V
Rise Time
8.5ns
Drive Voltage (Max Rds On,Min Rds On)
2.7V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
8.5 ns
Turn-Off Delay Time
17 ns
Continuous Drain Current (ID)
680mA
Threshold Voltage
800mV
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
25V
Dual Supply Voltage
25V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
800 mV
Height
1.11mm
Length
2.92mm
Width
3.05mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.07598
$0.22794
6,000
$0.06641
$0.39846
15,000
$0.05684
$0.8526
30,000
$0.05365
$1.6095
75,000
$0.05046
$3.7845
150,000
$0.04408
$6.612
FDV303N Product Details
FDV303N Description
FDV303N N-Channel MOSFET is using a proprietary, high cell density. FDV303N datasheet can remove the additional components and improve system reliability in certain applications that require performance improvement of the body diode. FDV303N ON Semiconductor is used in high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers.