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FDV303N

FDV303N

FDV303N

ON Semiconductor

FDV303N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDV303N Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 16 hours ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 450mOhm
Terminal Finish TIN
Subcategory FET General Purpose Power
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 680mA
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Voltage 20V
Power Dissipation-Max 350mW Ta
Element Configuration Single
Current 12A
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
Turn On Delay Time 3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C 680mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
Rise Time 8.5ns
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 680mA
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 25V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 800 mV
Height 1.11mm
Length 2.92mm
Width 3.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.07598 $0.22794
6,000 $0.06641 $0.39846
15,000 $0.05684 $0.8526
30,000 $0.05365 $1.6095
75,000 $0.05046 $3.7845
150,000 $0.04408 $6.612
FDV303N Product Details

FDV303N Description

 

FDV303N N-Channel MOSFET is using a proprietary, high cell density. FDV303N datasheet can remove the additional components and improve system reliability in certain applications that require performance improvement of the body diode. FDV303N ON Semiconductor is used in high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers.

 

 

FDV303N Features

 

RoHS Compliant

Very low-level gate drive

Silicon combination

Advanced Package

Gate-Source Zener

 

 

FDV303N Applications

 

High-efficiency miniature

DC/DC conversion

Cellular phones

Pagers

 


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