STGD3NB60SD-1

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Manufacturer part number:STGD3NB60SD-1

Manufacturer:STMicroelectronics

Description:STGD3NB60SD-1 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGD3NB60SD-1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Operating Temperature	175°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	48W
Base Part Number	STGD3
Element Configuration	Single
Input Type	Standard
Power - Max	48W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	6A
Reverse Recovery Time	1.7 μs
Collector Emitter Breakdown Voltage	600V
Test Condition	480V, 3A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.5V @ 15V, 3A
Gate Charge	18nC
Current - Collector Pulsed (Icm)	25A
Td (on/off) @ 25°C	125μs/3.4μs
Switching Energy	1.1mJ (on), 1.15mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	4.5V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant