FGA25N120FTD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGA25N120FTD Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
313W
Element Configuration
Single
Input Type
Standard
Turn On Delay Time
48 ns
Power - Max
313W
Turn-Off Delay Time
210 ns
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
50A
Reverse Recovery Time
770 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Test Condition
600V, 25A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 25A
IGBT Type
Trench Field Stop
Gate Charge
160nC
Current - Collector Pulsed (Icm)
75A
Td (on/off) @ 25°C
48ns/210ns
Switching Energy
340μJ (on), 900μJ (off)
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.448931
$0.448931
10
$0.423520
$4.2352
100
$0.399547
$39.9547
500
$0.376931
$188.4655
1000
$0.355596
$355.596
FGA25N120FTD Product Details
FGA25N120FTD Description
The FGA25N120FTD is a high voltage and high current IGBT with NPT Trench Technology. The FGA25N120FTD IGBT can switch 1200V with a current rating of up to 50A. It also has a very low gate saturation voltage of 2V allowing it to be used in low voltage driver-side designs.
FGA25N120FTD Features
Field Stop Trench Technology
High Input Impedance
High-Speed Switching
RoHS Complaint
Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 25 A