FGA40N60UFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGA40N60UFDTU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2003
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
600V
Max Power Dissipation
160W
Current Rating
40A
Element Configuration
Single
Power Dissipation
160W
Input Type
Standard
Rise Time
30ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
40A
Reverse Recovery Time
95 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
3.1V
Test Condition
300V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 20A
Gate Charge
77nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
15ns/65ns
Switching Energy
470μJ (on), 130μJ (off)
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.201786
$1.201786
10
$1.133760
$11.3376
100
$1.069585
$106.9585
500
$1.009042
$504.521
1000
$0.951927
$951.927
FGA40N60UFDTU Product Details
FGA40N60UFDTU Description
FGA40N60UFDTU ultrafast IGBT is a member of the UFD series of Insulated Gate Bipolar Transistors (IGBTs) developed by ON Semiconductor. It is able to deliver low conduction and switching losses, high input impedance, as well as short circuit ruggedness. As a result, it is ideally suitable for a wide range of applications, including AC & DC motor controls, general-purpose inverters, robotics, and servo controls.