FGA40T65SHD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGA40T65SHD Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Weight
6.401g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Max Power Dissipation
268W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Power - Max
268W
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
80A
Reverse Recovery Time
31.8 ns
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
2.14V
Test Condition
400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 40A
IGBT Type
Trench Field Stop
Gate Charge
72.2nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
19.2ns/65.6ns
Switching Energy
1.01mJ (on), 297μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.66000
$4.66
10
$4.19400
$41.94
450
$3.29264
$1481.688
900
$2.96946
$2672.514
1,350
$2.52720
$2.5272
FGA40T65SHD Product Details
FGA40T65SHD Description
FGA40T65SHD transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGA40T65SHD MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.