FGA50N100BNTD2

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Manufacturer part number:FGA50N100BNTD2

Manufacturer:ON Semiconductor

Description:FGA50N100BNTD2 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGA50N100BNTD2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	156W
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	156W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1kV
Max Collector Current	50A
Reverse Recovery Time	75 ns
Collector Emitter Breakdown Voltage	1kV
Voltage - Collector Emitter Breakdown (Max)	1000V
Collector Emitter Saturation Voltage	1.5V
Turn On Time	102 ns
Test Condition	600V, 60A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 60A
Turn Off Time-Nom (toff)	308 ns
IGBT Type	NPT and Trench
Gate Charge	257nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	34ns/243ns
Gate-Emitter Voltage-Max	25V
Gate-Emitter Thr Voltage-Max	7V
Fall Time-Max (tf)	100ns
Height	20.1mm
Length	15.8mm
Width	5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant