IRGIB10B60KD1P

new-10%

Manufacturer part number:IRGIB10B60KD1P

Manufacturer:Infineon Technologies

Description:IGBT 600V 16A 44W TO220FP

Case Package:SOT-23

Datasheet:IRGIB10B60KD1P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.299997g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	44W
Current Rating	16A
Number of Elements	1
Element Configuration	Single
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	MOTOR CONTROL
Rise Time	24ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	16A
Reverse Recovery Time	79 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.1V
Turn On Time	46 ns
Test Condition	400V, 10A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 10A
Turn Off Time-Nom (toff)	288 ns
IGBT Type	NPT
Gate Charge	41nC
Current - Collector Pulsed (Icm)	32A
Td (on/off) @ 25°C	25ns/180ns
Switching Energy	156μJ (on), 165μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Fall Time-Max (tf)	87ns
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free