STGB3NC120HDT4

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STGB3NC120HDT4

Manufacturer part number:STGB3NC120HDT4

Manufacturer:STMicroelectronics

Description:IGBT Transistors IGBT 1200V 7A PowerMESH Ultrafast

Case Package:SOT-23

Datasheet:STGB3NC120HDT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 months ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	2.000002g
Transistor Element Material	SILICON
Manufacturer Package Identifier	D2Pak
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
Max Power Dissipation	75W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGB3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	75W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	15 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	118 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	14A
Reverse Recovery Time	51 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.3V
Max Breakdown Voltage	1.2kV
Turn On Time	18.5 ns
Test Condition	800V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 3A
Max Junction Temperature (Tj)	150°C
Continuous Collector Current	14A
Turn Off Time-Nom (toff)	680 ns
Gate Charge	24nC
Current - Collector Pulsed (Icm)	20A
Td (on/off) @ 25°C	15ns/118ns
Switching Energy	236μJ (on), 290μJ (off)
Height	4.83mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free