FGB40N6S2T datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGB40N6S2T Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Supplier Device Package
TO-263AB
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
600V
Max Power Dissipation
290W
Current Rating
75A
Base Part Number
FGB40N6
Element Configuration
Single
Power Dissipation
290W
Input Type
Standard
Power - Max
290W
Rise Time
10ns
Collector Emitter Voltage (VCEO)
2.7V
Max Collector Current
75A
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
75A
Collector Emitter Saturation Voltage
1.9V
Max Breakdown Voltage
600V
Test Condition
390V, 20A, 3Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 20A
Gate Charge
35nC
Current - Collector Pulsed (Icm)
180A
Td (on/off) @ 25°C
8ns/35ns
Switching Energy
115μJ (on), 195μJ (off)
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$24.044800
$24.0448
10
$22.683774
$226.83774
100
$21.399786
$2139.9786
500
$20.188478
$10094.239
1000
$19.045734
$19045.734
FGB40N6S2T Product Details
FGB40N6S2T Description
FGB40N6S2T developed by ON Semiconductor is a type of 600V, SMPS II Series N-Channel IGBT combining the fast switching speed of the SMPS IGBTs with low gate charge, low plateau voltage, and avalanche capability (UIS). Delay times can be shortened, and the power requirement of the gate drive can be reduced. FGB40N6S2T IGBT provides considerable benefits for high voltage switched mode power supply applications where low conduction requires loss, fast switching times, and UIS capability.