STGD7NB60ST4

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Manufacturer part number:STGD7NB60ST4

Manufacturer:STMicroelectronics

Description:STGD7NB60ST4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGD7NB60ST4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	55W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	7A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGD7
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	55W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	MOTOR CONTROL
Drain to Source Voltage (Vdss)	600V
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	15A
Continuous Drain Current (ID)	7A
JEDEC-95 Code	TO-252AA
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.6V
Max Breakdown Voltage	600V
Turn On Time	1160 ns
Test Condition	480V, 7A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 7A
Gate Charge	33nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	700ns/-
Switching Energy	3.5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free