IRG4BC30F-STRL Description

IRG4BC30F-STRL is a 600V insulated gate bipolar transistor. The IRG4BC30F-STRL is optimized for specified application conditions. The Infineon insulated gate bipolar transistor IRG4BC30F-STRL is designed to be a "drop-in" replacement for equivalent industry-standard generation 3 IR IGBTs. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4BC30F-STRL is in the TO-220AB package with 100W power dissipation.

IRG4BC30F-STRL Features

Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode).

Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

Industry-standard TO-220AB package

Continuous Collector Current IC @ TC = 25°C: 31A

Gate-to-Emitter Voltage: ±20V

IRG4BC30F-STRL Applications

Automotive 

Hybrid, electric & powertrain systems 

Enterprise systems 

Enterprise projectors 

Personal electronics 

Home theater & entertainment