IXDR30N120D1

new-10%

Manufacturer part number:IXDR30N120D1

Manufacturer:IXYS

Description:IGBT 1200V 50A 200W ISOPLUS247

Case Package:SOT-23

Datasheet:IXDR30N120D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXD*30N120
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	200W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	70ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	50A
Reverse Recovery Time	40ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.4V
Turn On Time	170 ns
Test Condition	600V, 30A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 30A
Turn Off Time-Nom (toff)	570 ns
IGBT Type	NPT
Gate Charge	120nC
Current - Collector Pulsed (Icm)	60A
Switching Energy	4.6mJ (on), 3.4mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant