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STGW30NC60VD

  • STGW30NC60VD
  • STGW30NC60VD

STGW30NC60VD

STGW30NC60VD

STMicroelectronics

STGW30NC60VD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGW30NC60VD Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Base Part Number STGW30
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 250W
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 11ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 44ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 42.5 ns
Test Condition 390V, 20A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 280 ns
Gate Charge 100nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 31ns/100ns
Switching Energy 220μJ (on), 330μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 21.07mm
Length 16.02mm
Width 5.15mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.31000 $4.31
30 $3.66200 $109.86
120 $3.17367 $380.8404
510 $2.70165 $1377.8415
1,020 $2.27850 $2.2785
2,520 $2.17000 $4.34
STGW30NC60VD Product Details

STGW30NC60VD Description


STGW30NC60VD is a kind of very fast IGBT with an ultrafast diode that is provided by STMicrocontroller based on the advanced PowerMESH? technology. On the basis of this technology, both advanced switching performance and low on-state behavior can be achieved, making IGBT STGW30NC60VD ideally suited for resonant or soft switching applications.



STGW30NC60VD Features


  • Advanced switching performance 

  • Low on-state behavior

  • Low on-voltage drop (VCE(sat))

  • Soft ultra-fast recovery anti-parallel diode

  • Available in the TO-247 package



STGW30NC60VD Applications


  • High-frequency inverters, UPS

  • Motor drive

  • SMPS and PFC in both hard switch and resonant topologies


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