FGH40T65SHDF-F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGH40T65SHDF-F155 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2016
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
268W
Element Configuration
Single
Input Type
Standard
Power - Max
268W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
650V
Max Collector Current
80A
Reverse Recovery Time
101 ns
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
1.45V
Test Condition
400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.81V @ 15V, 40A
IGBT Type
Field Stop
Gate Charge
68nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
18ns/64ns
Switching Energy
1.22mJ (on), 440μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
7.5V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.78000
$4.78
10
$4.31100
$43.11
450
$3.38411
$1522.8495
900
$3.05196
$2746.764
1,350
$2.59740
$2.5974
FGH40T65SHDF-F155 Product Details
FGH40T65SHDF-F155 Description
Using novel field stop IGBT technology, ON Semiconductor’s newseries of field stop 3rd generation IGBTs offer superior conductionand switching performance and easy parallel operation. This deviceis well suited for the resonant or soft switching application such as induction heating and MWO.
FGH40T65SHDF-F155 Features
? Maximum Junction Temperature: TJ = 175°C
? Positive Temperature Co?efficient for Easy Parallel Operating
? High Current Capability
? Low Saturation Voltage: VCE(sat) = 1.45 V(Typ.) @ IC = 40 A