APT40GP90B2DQ2G

new-10%

Manufacturer part number:APT40GP90B2DQ2G

Manufacturer:Microsemi Corporation

Description:IGBT 900V 101A 543W TMAX

Case Package:SOT-23

Datasheet:APT40GP90B2DQ2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Lifecycle Status	NOT RECOMMENDED FOR NEW DESIGN (Last Updated: 1 month ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Series	POWER MOS 7®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	900V
Max Power Dissipation	543W
Current Rating	101A
Pin Count	3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	900V
Max Collector Current	101A
Collector Emitter Breakdown Voltage	900V
Turn On Time	37 ns
Test Condition	600V, 40A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.9V @ 15V, 40A
Turn Off Time-Nom (toff)	220 ns
IGBT Type	PT
Gate Charge	145nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25°C	14ns/90ns
Switching Energy	795μJ (off)
Gate-Emitter Thr Voltage-Max	6V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free