IXXA50N60B3

new-10%

Manufacturer part number:IXXA50N60B3

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 600V 120A 3-Pin(2+Tab) TO-263AA

Case Package:SOT-23

Datasheet:IXXA50N60B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Series	XPT™, GenX3™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	2
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	600W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	120A
Reverse Recovery Time	40ns
Power Dissipation-Max (Abs)	600W
Turn On Time	75 ns
Test Condition	360V, 36A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 36A
Turn Off Time-Nom (toff)	320 ns
Gate Charge	70nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	27ns/150ns
Switching Energy	670μJ (on), 1.2mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Radiation Hardening	No
RoHS Status	RoHS Compliant