STGW80H65DFB-4

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Manufacturer part number:STGW80H65DFB-4

Manufacturer:STMicroelectronics

Description:STGW80H65DFB-4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW80H65DFB-4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-4
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Max Power Dissipation	469W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGW80
Element Configuration	Single
Input Type	Standard
Power - Max	469W
Collector Emitter Voltage (VCEO)	2V
Max Collector Current	120A
Reverse Recovery Time	85 ns
Collector Emitter Breakdown Voltage	650V
Test Condition	400V, 80A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 80A
IGBT Type	Trench Field Stop
Gate Charge	414nC
Current - Collector Pulsed (Icm)	240A
Td (on/off) @ 25°C	84ns/280ns
Switching Energy	2.1mJ (on), 1.5mJ (off)
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
600	$9.93250	$5959.5

STGW80H65DFB-4 Description

STGW80H65DFB-4, a part of the new HB series of IGBTs, is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It ensures extremely low conduction and switching losses to maximize the efficiency of very high-frequency converters. A safer paralleling operation can be provided based on a positive VCE(sat) temperature coefficient and very tight parameter distribution. The STGW80H65DFB-4 IGBT is embedded in the TO247-4 package for the purpose of saving board space.