FGH60N60SMD

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Manufacturer part number:FGH60N60SMD

Manufacturer:ON Semiconductor

Description:FGH60N60SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGH60N60SMD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	600W
Base Part Number	FGH60N60
Number of Elements	1
Rise Time-Max	70ns
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	27 ns
Power - Max	600W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	146 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	120A
Reverse Recovery Time	39 ns
JEDEC-95 Code	TO-247AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.9V
Turn On Time	59 ns
Test Condition	400V, 60A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 60A
Turn Off Time-Nom (toff)	163 ns
IGBT Type	Field Stop
Gate Charge	189nC
Current - Collector Pulsed (Icm)	180A
Td (on/off) @ 25°C	18ns/104ns
Switching Energy	1.26mJ (on), 450μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	68ns
Height	20.6mm
Length	15.6mm
Width	4.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free