FGH75T65UPD-F085

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Manufacturer part number:FGH75T65UPD-F085

Manufacturer:ON Semiconductor

Description:FGH75T65UPD-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGH75T65UPD-F085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	375W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Rise Time-Max	71ns
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	375W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	150A
Reverse Recovery Time	85 ns
JEDEC-95 Code	TO-247AB
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	2.21V
Turn On Time	87 ns
Test Condition	400V, 75A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 75A
Turn Off Time-Nom (toff)	197 ns
IGBT Type	Trench Field Stop
Gate Charge	578nC
Current - Collector Pulsed (Icm)	225A
Td (on/off) @ 25°C	32ns/166ns
Switching Energy	2.85mJ (on), 1.2mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7.5V
RoHS Status	ROHS3 Compliant