SIGC100T60R3EX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
SIGC100T60R3EX1SA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Published
2011
Series
TrenchStop™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
10
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUUC-N10
Number of Elements
1
Configuration
SINGLE
Input Type
Standard
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Drain to Source Voltage (Vdss)
600V
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Dual Supply Voltage
600V
Current - Collector (Ic) (Max)
200A
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 200A
IGBT Type
Trench Field Stop
Current - Collector Pulsed (Icm)
600A
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$16.163990
$16.16399
10
$15.249048
$152.49048
100
$14.385894
$1438.5894
500
$13.571598
$6785.799
1000
$12.803394
$12803.394
SIGC100T60R3EX1SA1 Product Details
SIGC100T60R3EX1SA1 Description
SIGC100T60R3EX1SA1 belongs to the family of TRENCHSTOP? IGBT3 chips provided by Infineon Technologies. It is designed based on 600V trench & field stop technology to realize low turn-out losses, short tail current, positive temperature coefficient, and easy paralleling. It combines the advantages of power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.