MMIX1G320N60B3

new-10%

Manufacturer part number:MMIX1G320N60B3

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 600V 400A 21-Pin

Case Package:SOT-23

Datasheet:MMIX1G320N60B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mounting Type	Surface Mount
Package / Case	24-PowerSMD, 21 Leads
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	2011
Series	GenX3™
Pbfree Code	yes
Part Status	Active
Number of Terminations	21
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G21
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	ISOLATED
Input Type	Standard
Power - Max	1000W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	66ns
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	400A
Power Dissipation-Max (Abs)	1000W
Turn On Time	107 ns
Test Condition	480V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.5V @ 15V, 100A
Turn Off Time-Nom (toff)	595 ns
IGBT Type	PT
Gate Charge	585nC
Current - Collector Pulsed (Icm)	1000A
Td (on/off) @ 25°C	44ns/250ns
Switching Energy	2.7mJ (on), 5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	RoHS Compliant