IGW75N60TFKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IGW75N60TFKSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2008
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
428W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-247AD
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
150A
Turn On Time
69 ns
Test Condition
400V, 75A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 75A
Turn Off Time-Nom (toff)
401 ns
IGBT Type
Trench Field Stop
Gate Charge
470nC
Current - Collector Pulsed (Icm)
225A
Td (on/off) @ 25°C
33ns/330ns
Switching Energy
4.5mJ
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.56000
$7.56
10
$6.88600
$68.86
240
$5.79300
$1390.32
720
$5.11354
$3681.7488
1,200
$4.52270
$4.5227
IGW75N60TFKSA1 Product Details
IGW75N60TFKSA1 Description
IGW75N60TFKSA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IGW75N60TFKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IGW75N60TFKSA1 has the common source configuration.