FGL60N100BNTDTU

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Manufacturer part number:FGL60N100BNTDTU

Manufacturer:ON Semiconductor

Description:FGL60N100BNTDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGL60N100BNTDTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 1 week ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Weight	6.756g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Voltage - Rated DC	1kV
Max Power Dissipation	180W
Current Rating	60A
Number of Elements	1
Element Configuration	Single
Power Dissipation	180W
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1kV
Max Collector Current	60A
Reverse Recovery Time	1.2 μs
Collector Emitter Breakdown Voltage	1kV
Voltage - Collector Emitter Breakdown (Max)	1000V
Collector Emitter Saturation Voltage	1.5V
Turn On Time	460 ns
Test Condition	600V, 60A, 51 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 60A
Turn Off Time-Nom (toff)	760 ns
IGBT Type	NPT and Trench
Gate Charge	275nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	140ns/630ns
Height	26mm
Length	20mm
Width	5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free