STGWA60V60DWFAG Description

The  STGWA60V60DWFAG is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. 

STGWA60V60DWFAG Features

• AEC-Q101 qualified

• Maximum junction temperature: T_J = 175 °C

• V_CE(sat) = 1.85 V (typ.) @ I_C = 60 A

• Tail-less switching current

• Tight parameter distribution

• Low thermal resistance

• Positive V_CE(sat) temperature coefficient

• Silicon carbide diode with no-reverse recovery charge is co-packaged in a freewheeling configuration

STGWA60V60DWFAG Applications

• Automotive converters

• Totem-pole power factor correction